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PSMN5R5-60YS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 5.2 mΩ standard level FET
NXP Semiconductors
PSMN5R5-60YS
N-channel LFPAK 60 V, 5.2 mΩ standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS(th)
QGS(th-pl)
QGD
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS= VGS; Tj = 25 °C;
see Figure 10 and 11
ID = 1 mA; VDS= VGS; Tj = -55 °C;
see Figure 11
ID = 1 mA; VDS= VGS; Tj = 175 °C;
see Figure 11
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
f = 1 MHz
ID = 75 A; VDS = 30 V; VGS = 10 V;
see Figure 14 and 15
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 75 A; VDS = 30 V; VGS = 10 V;
see Figure 14 and 15
ID = 75 A; VDS = 30 V; VGS = 10 V;
see Figure 14
ID = 75 A; VDS = 30 V; VGS = 10 V;
see Figure 14 and 15
VDS = 30 V; see Figure 14 and 15
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 16
VDS = 30 V; RL = 0.4 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
PSMN5R5-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 24 December 2009
Min Typ Max Unit
54
-
-
V
60
-
-
V
2
3
4
V
-
-
4.6 V
0.95 -
-
V
-
0.05 5
µA
-
-
100 µA
-
2
100 nA
-
2
100 nA
-
7.6 12
mΩ
-
-
8.3 mΩ
-
3.6 5.2 mΩ
-
0.7 -
Ω
-
56
-
nC
-
47.5 -
nC
-
18.7 -
nC
-
10.3 -
nC
-
8.4 -
nC
-
11.2 -
nC
-
4.9 -
V
-
3501 -
pF
-
457 -
pF
-
240 -
pF
-
23
-
ns
-
24
-
ns
-
44
-
ns
-
14
-
ns
© NXP B.V. 2009. All rights reserved.
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