PSMN4R3-30BL Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
0
-6 0
0
60
120
180
Tj (°C)
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
16
R_DSon
(mΩ)
12
3
003aad237
8
3.5
4
4.5
5
4
V_GS (V) =10
0
0
20
40
60
80
100
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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