PSMN4R3-30BL Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
Minimum footprint; mounted on a
printed circuit board
Min Typ Max Unit
-
1
1.5 K/W
-
50
-
K/W
10
Z_{th (j-mb)}
(K/W)
1
δ = 0.5
0.2
10^{-1 0.1}
0.05
10^-2 0.02
003aad234
P
δ = ^tp
T
10^-3
single shot
t_p
t
T
10^-4
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
1
10
t_p (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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