PSMN4R3-30BL Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
Table 7. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol Parameter
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
Conditions
V_DS = 15 V; R_L = 0.5 Ω; V_GS = 10 V;
R_G(ext) = 5.6 Ω
V_SD
source-drain voltage
I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time
I_S = 15 A; dI_S/dt = -100 A/µs;
Q_r
recovered charge
V_GS = 0 V; V_DS = 15 V
120
g_fs
(S)
80
003aad244
5000
C
(pF)
4000
3000
40
0
0
20
40
60
80
100
I_D (A)
2000
1000
0
0
3
Min Typ Max Unit
-
28
-
ns
-
58 -
ns
-
44
-
ns
-
21 -
ns
-
0.81 1.2 V
-
35
-
ns
-
30 -
nC
003aad240
C_iss
C_rss
6
9 _{VGS (V)} 12
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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