PSMN4R3-30BL Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
I_DM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Min
T_j ≥ 25 °C; T_j ≤ 175 °C
-
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
-
-20
V_GS = 10 V; T_mb = 100 °C; see Figure 1 ^[1] -
V_GS = 10 V; T_mb = 25 °C; see Figure 1 ^[1] -
pulsed; t_p ≤ 10 µs; T_mb = 25 °C;
-
see Figure 3
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
-
T_stg
storage temperature
-55
T_j
junction temperature
-55
T_sld(M)
peak soldering temperature
-
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
[1] _-
-
E_DS(AL)S
non-repetitive drain-source
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
-
avalanche energy
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
80 A
100 A
465 A
103 W
175 °C
175 °C
260 °C
100 A
465 A
74 mJ
150
I_D
(A)
100
(1)
003aad235
120
P_der
(%)
80
03aa16
50
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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