PSMN4R3-30BL Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
Conditions
Min Typ Max Unit
T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
30 V
T_mb = 25 °C; V_GS = 10 V; see Figure 1 ^[1] -
-
100 A
T_mb = 25 °C; see Figure 2
-
-
103 W
-55 -
175 °C
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 15 A; T_j = 100 °C;
see Figure 12; see Figure 13
-
4.9 5.8 mΩ
V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
see Figure 13
-
3.5 4.1 mΩ
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
V_GS = 4.5 V; I_D = 15 A; V_DS = 15 V;
see Figure 14; see Figure 15
-
5
-
nC
-
19 -
nC
E_DS(AL)S
non-repetitive drain-source V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
avalanche energy
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped
-
-
74 mJ
[1] Continuous current is limited by package.