PSMN4R3-30BL Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
12
R_DSon
(mΩ)
8
003aad238
4
0
0
5
10
15
V_GS (V)
100
I_D
10
(A)
5
80
4
3.5
60
003aad236
3
40
20
V_GS (V) =2.5
0
0
1
2
3
4
5
V_DS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
100
I_D
(A)
80
60
T_j = 175 °C
003aad241
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
40
25 °C
10^-4
20
10^-5
0
0
1
2
3
4
5
V_GS (V)
10^-6
0
1
2 V_GS (V) 3
Fig 9. Transfer characteristics: drain current as a
Fig 10. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
8 of 15