PSMN009-100P Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
100
I_S
(A)
80
60
40
20
0
0
03ai06
T_j = 175 °C
25 °C
0.5
1.0
1.5
V_SD (V)
Fig 13. Source current as a function of source-drain voltage; typical values
PSMN009-100P_2
Product data sheet
Rev. 02 — 30 September 2009
© NXP B.V. 2009. All rights reserved.
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