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PSMN009-100P Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from vertical in free air
junction to ambient
Min Typ Max Unit
-
-
0.65 K/W
-
60
-
K/W
03af48
1
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
P
δ = tp
T
Fig 4.
single pulse
10−3
10−6
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN009-100P_2
Product data sheet
Rev. 02 — 30 September 2009
© NXP B.V. 2009. All rights reserved.
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