PSMN009-100P Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
120
I_der
(%)
100
03ah99
80
60
40
20
0
0
30
60
90 120 150 180
T_mb (°C)
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
Limit R_DSon = V_DS/I_D
10²
DC
10
1
1
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03ai01
t_p = 10 µs
100 µs
1 ms
10 ms
100 ms
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN009-100P_2
Product data sheet
Rev. 02 — 30 September 2009
© NXP B.V. 2009. All rights reserved.
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