PSMN009-100P Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
50
I_D
(A)
40
T_j = 25 °C
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10 V 6 V 5.6 V 5.4 V
5.2 V
30
5V
20
10
0
0
4.8 V
4.6 V
4.4 V
V_GS = 4.2 V
0.2
0.4
0.6
0.8
1
V_DS (V)
80
I_D
(A)
V_DS > I_D x R_DSon
60
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40
20
0
0
175 °C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
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10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN009-100P_2
Product data sheet
Rev. 02 — 30 September 2009
© NXP B.V. 2009. All rights reserved.
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