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| PSMN009-100P Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 8
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 9; see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 75 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 15 V; RL = 1.25 â¦; VGS = 10 V;
RG(ext) = 6 â¦; Tj = 25 °C; ID = 12 A
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
Min Typ Max Unit
90
-
-
V
100 -
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
-
500 µA
-
0.02 1
µA
-
10
100 nA
-
10
100 nA
-
20.25 23.8 mâ¦
-
7.5 8.8 mâ¦
-
156 -
nC
-
31
-
nC
-
44
-
nC
-
8250 -
pF
-
620 -
pF
-
300 -
pF
-
38
-
ns
-
59
-
ns
-
120 -
ns
-
43
-
ns
-
0.8 1.2 V
PSMN009-100P_2
Product data sheet
Rev. 02 â 30 September 2009
© NXP B.V. 2009. All rights reserved.
6 of 13
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