PHPT60610NY Datasheet, PDF (9/17 Pages) NXP Semiconductors – 60 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
10³
R_CEsat
(Ω)
10²
aaa-016639
10³
R_CEsat
(Ω)
10²
aaa-016640
10
1
10^-1
(1)
(2)
10^-2
10^-1
1
10
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
(3)
10²
10³
10⁴
I_C (mA)
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10
(1)
1
(2)
(3)
10^-1
(4)
10^-2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 20
(4) I_C/I_B = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT60610NY
Product data sheet
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27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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