PHPT60610NY Datasheet, PDF (8/17 Pages) NXP Semiconductors – 60 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
1.2
V_BE
(V)
1.0
0.8
0.6
0.4
aaa-016635
(1)
(2)
(3)
1.2
V_BEsat
(V)
1.0
0.8
0.6
0.4
aaa-016636
(1)
(2)
(3)
0.2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
1
aaa-016637
0.2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
1
aaa-016638
V_CEsat
(V)
V_CEsat
(V)
10^-1
10^-2
(1)
(2)
(3)
10^-1
(1)
(2)
10^-2
(3)
10^-3
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
(4)
10^-3
10^-1
1
10
10²
10³
10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 20
(4) I_C/I_B = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT60610NY
Product data sheet
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27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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