PHPT60610NY Datasheet, PDF (7/17 Pages) NXP Semiconductors – 60 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
Symbol
f_T
C_c
600
h_FE
400
200
Parameter
transition frequency
collector capacitance
Conditions
V_CE = 10 V; I_C = 500 mA; f = 100 MHz;
T_amb = 25 °C
V_CB = 10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
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(1)
(2)
12
I_C
(A)
8
(3)
4
Min Typ Max Unit
-
140 -
MHz
-
50
-
pF
I_B = 120 mA
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95 mA
70 mA
50 mA
35 mA
20 mA
10 mA
25 mA
15 mA
5 mA
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT60610NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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