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PHPT60610NY Datasheet, PDF (5/17 Pages) NXP Semiconductors – 60 V, 10 A NPN high power bipolar transistor
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NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.2
10 0.1
0.05
0.02
0.01
1
aaa-016570
0
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (ns)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-016571
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
1 0.02 0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (ns)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT60610NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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