PHPT60610NY Datasheet, PDF (3/17 Pages) NXP Semiconductors – 60 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current
I_CM
peak collector current
single pulse; t_p ≤ 1 ms
I_B
base current
I_BM
peak base current
single pulse; t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
60
V
-
60
V
-
7
V
-
10
A
-
20
A
-
1.5 A
-
2
A
[1]
-
[2]
-
1.5 W
3.7 W
[3]
-
5
W
[4]
-
25
W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
[2] _{Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm}²_.
[3] Device mounted on a ceramic PCB; Al₂O₃, standard footprint.
[4] Power dissipation from junction to mounting base.
PHPT60610NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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