PHPT60610NY Datasheet, PDF (10/17 Pages) NXP Semiconductors – 60 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60610NY
60 V, 10 A NPN high power bipolar transistor
11. Test information
I_B
90 %
10 %
I_C
90 %
I_Bon (100 %)
input pulse
(idealized waveform)
I_Boff
output pulse
(idealized waveform)
I_C (100 %)
10 %
t_d
t_r
t_on
Fig. 12. BISS transistor switching time definition
V_BB
V_CC
t_s
t_off
t
t_f
006aaa003
oscilloscope ^(probe)
450 Ω
V_I
R_B
R2
R1
Fig. 13. Test circuit for switching times
R_C
V_{o (probe) oscilloscope}
450 Ω
DUT
mlb826
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT60610NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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