PHP165NQ08T Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
10
V_GS
(V)
I_D = 75A
T_j = 25 °C
7.5
14 V
5
003aac599
V_DS = 60 V
2.5
0
0
50
100
150Q_{G (nC)} 200
Fig 13. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
75
10⁵
C
(pF)
10⁴
003aac596
C_iss
10³
10²
10^-1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aac598
50
25
T_j = 150 °C
25 °C
0
0
0.25
0.5
0.75
1
V_SD (V)
Fig 15. Source current as a function of source-drain voltage; typical values
PHP165NQ08T_2
Product data sheet
Rev. 02 — 27 March 2009
© NXP B.V. 2009. All rights reserved.
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