PHP165NQ08T Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
125
I_der
(%)
100
75
50
25
0
0
003aac592
50
100
150
200
T_j (°C)
120
P_der
(%)
80
003aac591
40
0
0
50
100
150
200
T_j (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac600
t_p = 10 μs
100 μs
DC
1 ms
10 ms
100 ms
10^-1
10^-1
1
10
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP165NQ08T_2
Product data sheet
Rev. 02 — 27 March 2009
© NXP B.V. 2009. All rights reserved.
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