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| PHP165NQ08T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
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NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠150 °C
Tj ⤠150 °C; Tj ⥠25 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3
IDM
peak drain current
tp ⤠10 µs; pulsed; Tmb = 25 °C;
see Figure 3
Ptot
Tstg
Tj
VGSM
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
Tmb = 25 °C; see Figure 2
pulsed; tp ⤠50 µs; δ = 25 %; Tj ⤠150 °C
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup = 15 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 â¦
energy
IDS(AL)S
non-repetitive
VGS = 10 V; Vsup = 15 V; RGS = 50 â¦;
drain-source avalanche Tj(init) = 25 °C; unclamped
current
Min Max Unit
-
75
V
-
75
V
-20 20
V
-
75
A
-
75
A
-
400 A
-
250 W
-55 150 °C
-55 150 °C
-30 30
V
-
75
A
-
400 A
-
500 mJ
-
75
A
PHP165NQ08T_2
Product data sheet
Rev. 02 â 27 March 2009
© NXP B.V. 2009. All rights reserved.
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