PHP165NQ08T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 27 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features and benefits
„ Fast switching
„ Low on-state resistance
„ Low recovered charge
1.3 Applications
„ AC-to-DC converters secondary side
„ Class D amplifiers
„ DC-to-DC converters
„ Motion control
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Source-drain diode
Q_r
recovered charge
Static characteristics
V_GS = 0 V; I_S = 5 A;
dI_S/dt = 150 A/µs;
V_DS = 12 V
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11;
see Figure 10
Min Typ Max Unit
-
-
75 V
-
-
75 A
-
-
250 W
-
56 -
nC
-
4.1 5
mΩ