PHP165NQ08T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
0
003aac595
min typ
max
2
4
V_GS (V) ⁶
16
R_DSon
(m Ω)
V_GS = 5 V
12
5.5 V
003aac602
6V
8
6.5 V
4
10 V 8.5 V 8 V 7.5 V 7 V
0
0
60
120
180
240 _{ID (A)300}
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
2.5
a
2
03aj03
1.5
1
0.5
0
−60
0
60
120
180
T_j (°C)
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 12. Gate charge waveform definitions
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
PHP165NQ08T_2
Product data sheet
Rev. 02 — 27 March 2009
© NXP B.V. 2009. All rights reserved.
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