PHP165NQ08T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
300
I_D
7.5 V
(A)
8V
240
8.5 V
10 V
180
20 V
003aac603
7V
6.5 V
6V
120
5.5 V
60
VGS = 5 V
0
0
0.5
1
1.5
2
V_DS (V)
100
I_D
(A)
75
50
25
0
0
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T_j = 150 °C
25 °C
2
4 _{VGS (V)} 6
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10⁵
C
(pF)
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5
V_GS(th)
(V)
4
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max
C_iss
3
typ
10⁴
C_rss
2
min
1
10³
10^-1
1
10
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
PHP165NQ08T_2
Product data sheet
Rev. 02 — 27 March 2009
© NXP B.V. 2009. All rights reserved.
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