BUK9Y07-30B Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y07-30B
N-channel TrenchMOS logic level FET
5
VGS
(V)
4
3
2
1
0
0
VDS = 14 V
8
16
003aad493
VDS = 24 V
24
32
QG (nC)
10⁴
C
(pF)
10³
10²
10^-1
1
003aad494
Ciss
Coss
Crss
10 _{VDS (V)} 10²
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
80
IS
(A)
60
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
003aad492
40
20
0
0.2
175 °C T_j = 25 °C
0.4
0.6
0.8
1
VSD (V)
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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