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BUK9Y07-30B Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
NXP Semiconductors
BUK9Y07-30B
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 24 V; see Figure 14
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
-
198 mJ
-
12.4 -
nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbl798 S1 S2 S3
Table 3. Ordering information
Type number
Package
Name
BUK9Y07-30B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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