BUK9Y07-30B Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
100
I_D
(A)
75
(1)
50
003aac504
25
0
0
50
100
150
200
T_mb (°C)
BUK9Y07-30B
N-channel TrenchMOS logic level FET
120
P_der
(%)
80
003aab844
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10²
I_AL
(A)
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac484
(1)
(2)
(3)
10^-1
10^-3
10^-2
10^-1
1
10
t_AL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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