BUK9Y07-30B Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y07-30B
N-channel TrenchMOS logic level FET
80
10 5
ID
(A)
60
003aad489
VGS (V) = 2.9
2.8
40
2.6
2.4
20
2.2
0
0
1
2
3
4
5
VDS (V)
40
2.2
RDSon
(mΩ)
30
003aad490
2.4 V_GS (V) = 2.6 2.8 2.9
20
10
0
0
5
10
20
40
60
80
ID (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values.
of drain current; typical values.
100
gfs
(S)
80
003aad491
80
ID
(A)
60
003aad554
60
40
40
20
0
20
40
60
80
ID (A)
20
0
0
Tj = 175°C
25 °C
1
2
3
4
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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