BUK9Y07-30B Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y07-30B
N-channel TrenchMOS logic level FET
2.5
V_GS(th)
(V)
2.0
1.5
1.0
0.5
0.0
−60
0
003aab986
max
typ
min
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
003aab987
min
typ
max
1
2
3
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
2
a
1.5
003aab851
20
RDS ON
(mΩ)
15
003aad620
1
10
0.5
5
0
−60
0
60
120
180
T_j (°C)
0
0
5
10
15
VGS (V)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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