BUK7610-55AL Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
V_DS = 14 V
4
2
0
0
50
T _j = 25 °C; I_D = 25 A
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V_DS = 44 V
100 _{QG (nC)} 150
Fig 14. Gate-source voltage as a function of gate
charge; typical values
150
I_S
(A)
100
8000
C
(pF)
C_iss
6000
4000
2000
C_oss
C
rss
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0
10^-1
1
V_GS = 0 V ; f = 1 M H z
10
10²
V_DS (V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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T_j = 25 °C
50
T_j = 175 °C
V_GS = 0 V
0
0.0
0.3
0.6
0.9
1.2
V_SD (V)
Fig 16. Source current as a function of source-drain voltage; typical values
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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