BUK7610-55AL Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
400
I_D
(A) ₂₀
18
300 ₁₆
14
12
200
100
0
0
2
T _j = 25 °C
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V_GS (V) = 10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
V_DS (V)
20
R_DSon
(mΩ)
15
7 8 9 10
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10
V_GS (V) = 20
5
0
0
100
200
300
400
I_D (A)
T _j = 25 °C
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
40
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150
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g_fs
(S)
I_D
(A)
35
100
30
25
20
0
20
40
T _j = 25 °C; V_DS = 25 V
60 _{ID (A)} 80
50
T_j = 175 °C
T_j = 25 °C
0
0
2
4
6
8
10
V_GS (V)
V_DS = 25 V
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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