English
Language : 

BUK7610-55AL Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
◁
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
-
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/μs;
-
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/μs;
-
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 44 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGS
gate-source charge ID = 25 A; VDS = 44 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGD
gate-drain charge
ID = 25 A; VDS = 44 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
VGS(pl)
gate-source plateau ID = 25 A; VDS = 44 V; Tj = 25 °C;
-
voltage
see Figure 14
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
f = 1 MHz; Tj = 25 °C;
see Figure 15
Coss
output capacitance VGS = 0 V; VDS = 25 V;
-
f = 1 MHz; Tj = 25 °C;
see Figure 15
Crss
reverse transfer
VGS = 0 V; VDS = 25 V;
-
capacitance
f = 1 MHz; Tj = 25 °C;
see Figure 15
td(on)
tr
td(off)
tf
LD
LS
turn-on delay time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
rise time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
turn-off delay time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
fall time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
internal drain
inductance
from upper edge of drain
-
mounting base to center of die;
Tj = 25 °C
internal source
inductance
from source lead to source bond
-
pad; Tj = 25 °C
Typ
Max
Unit
0.85
1.2
V
73
-
ns
430
-
nC
124
-
nC
22
-
nC
50
-
nC
5
-
V
4710
6280
pF
980
1180
pF
560
770
pF
33
-
ns
117
-
ns
132
-
ns
95
-
ns
2.5
-
nH
7.5
-
nH
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
6 of 13
 ▷