BUK7610-55AL Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
[1] Current is limited by power dissipation chip rating.
[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Single shot avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
150
I_D
(A)
100
(1)
50
003aaa726
120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
T_mb (°C)
V_GS • 10 V
(1) Capped at 75 A due to package.
0
0
50
100
P_der =
P_tot
P _{t o t (25°C )}
× 100 %
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10²
003aaa739
(1)
I_AV
T_j = 25 ˚C
(A)
(2)
10
(3)
150 ˚C
1
10^-1
10^-2
10^-1
1 _{tAV (ms)} 10
(1) Singleíshot.
(2) Singleíshot.
(3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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