BUK7610-55AL Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7610-55AL
N-channel TrenchMOS standard level FET
Rev. 02 — 9 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized
for linear operation. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
„ 175 °C rated
„ Stable operation in linear mode
„ Q101 compliant
„ TrenchMOS technology
1.3 Applications
„ 12 V and 24 V loads
„ DC linear motor control
„ Automotive systems
„ Repetitive clamped inductive switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 4 and 1
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 75 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
inductive load
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12 and
13
[1] Continuous current is limited by package.
Min Typ Max Unit
[1] _-
-
75 A
-
-
300 W
-
-
1.1 J
-
8.5 10 mΩ