BUK7610-55AL Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
0
−60
0
60
I_D = 1 m A; V_DS = V_GS
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
03aa35
min typ max
10^−3
10^−4
10^−5
10^−6
0
2
T _j = 25 °C; V_DS = V_GS
4
6
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
18
R_DSon
(mΩ)
14
003aaa730
2
a
1.5
03ne89
1
10
0.5
6
5
10
T _j = 25 °C; I_D = 25 A
15 _{VGS (V)} 20
0
-60
0
60
a=
R _{DS o n}
R _{DS o n(25°C )}
120
180
Tj (°C)
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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