PSMN4R4-80PS Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 80 V, 4.1 mΩ standard level FET

NXP Semiconductors
PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET
003aad327
2.5
a
2
1.5
1
0.5
0
-60
0
60
120
180
T_j (°C)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 14. Gate charge waveform definitions
Fig 13. Normailzed drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
7.5
003aad105
V_DS = 20 V
V_DS = 40 V
5
10000
C
(pF)
7500
5000
003aad104
C_iss
2.5
0
0
35
70
105
140
Q_G (nC)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
2500
0
10^-1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R4-80PS_1
Product data sheet
Rev. 01 — 18 June 2009
© NXP B.V. 2009. All rights reserved.
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