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| PSMN4R4-80PS Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 80 V, 4.1 mΩ standard level FET | |||
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NXP Semiconductors
PSMN4R4-80PS
N-channel 80 V, 4.1 m⦠standard level FET
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
(1)
DC
1
10
10 μs
100 μs
003aad317
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
Min Typ Max Unit
-
0.23 0.49 K/W
003aad100
1
Zth (j-mb)
(K/W)
10-1 δ = 0.5
0.2
0.1
10-2 0.05
0.02
10-3
P
δ = tp
T
single shot
10-4
10-6
10-5
10-4
10-3
10-2
10-1
tp
t
T
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R4-80PS_1
Product data sheet
Rev. 01 â 18 June 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
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