PSMN4R4-80PS Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 80 V, 4.1 mΩ standard level FET

PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET
Rev. 01 — 18 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC - DC converters
„ Load switch
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
-
-
100 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
306 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 80 A;
V_DS = 40 V; see Figure 14;
see Figure 15
-
25 -
nC
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 6;
see Figure 13
[1] -
3.3 4.1 mΩ
[1] Measured 3 mm from package.