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PSMN4R4-80PS Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 80 V, 4.1 mΩ standard level FET
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NXP Semiconductors
PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 6; see Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 80 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 80 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th-pl) post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
Ciss
input capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 16
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 40 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 1.5 Ω
Min Typ Max Unit
73
80
1
-
2
-
-
-
-
[2] -
-
[2] -
-
-
-
V
-
-
V
-
-
V
-
4.6 V
3
4
V
-
10
µA
-
200 µA
-
100 nA
-
100 nA
7.6 9.47 mΩ
5.5 6.8 mΩ
3.3 4.1 mΩ
1
-
Ω
-
112 -
nC
-
125 -
nC
-
39
-
nC
-
24
-
nC
-
15
-
nC
-
25
-
nC
-
4.65 -
V
-
8400 -
pF
-
700 -
pF
-
336 -
pF
-
34.7 -
ns
-
38.1 -
ns
-
66
-
ns
-
18.4 -
ns
PSMN4R4-80PS_1
Product data sheet
Rev. 01 — 18 June 2009
© NXP B.V. 2009. All rights reserved.
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