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PSMN4R4-80PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 80 V, 4.1 mΩ standard level FET | |||
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NXP Semiconductors
PSMN4R4-80PS
N-channel 80 V, 4.1 m⦠standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1;
see Figure 3
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ⤠80 V;
drain-source avalanche RGS = 50 â¦; unclamped
energy
Min Max Unit
-
80
V
-
80
V
-20 20
V
-
100 A
-
100 A
-
680 A
-
306 W
-55 175 °C
-55 175 °C
-
100 A
-
680 A
-
591 mJ
200
ID
(A)
150
100
(1)
50
003aad091
120
Pder
(%)
80
40
03aa16
0
0
50
100
150
200
Tmb ( C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R4-80PS_1
Product data sheet
Rev. 01 â 18 June 2009
© NXP B.V. 2009. All rights reserved.
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