PSMN4R4-80PS Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 80 V, 4.1 mΩ standard level FET

NXP Semiconductors
PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET
250
g_fs
(S)
200
150
100
50
0
0
003aad109
50
100
150
200
I_D (A)
25
R_DSon
(mΩ)
20
15
10
5
0
0
003aad110
5
10
15
20
V_GS (V)
Fig 9. Forward transconductance as a function of
drain current; typical values
5
V_GS(th)
(V)
4
003aad280
max
3
typ
2
min
1
0
−60
0
60
120
180
T_j (°C)
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
10^−3
10^−4
10^−5
10^−6
0
2
4
6
V_GS (V)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PSMN4R4-80PS_1
Product data sheet
Rev. 01 — 18 June 2009
© NXP B.V. 2009. All rights reserved.
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