PSMN3R5-30LL Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V 3.6 mΩ logic level MOSFET

NXP Semiconductors
10
V_GS
(V)
8
6
4
2
0
0
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15 V
6V
V_DS = 24 V
10
20
30
40
Q_G (nC)
PSMN3R5-30LL ₁₀₄
C
(pF)
N-channel
30DVRA3F.T6DmRADΩ^FRTAloDFTR_CgA_i^D_si₀c_sFR0T3^DAl_aDeRFaTRAv_{e 1AFDe4}^TFRl_{6TADMDFRTORDAARFDSTFARFTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF}
10³
C_oss
10²
10^−1
1
C_rss
10 _{VDS (V)} 10²
Fig 14. Gate-source voltage as a function of gate
charge; typical values
50
I_S
(A)
40
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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30
20
T_j = 175 °C
T_j = 25 °C
10
0
0
0.3
0.6
0.9
1.2
V_SD(V)
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN3R5-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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