PSMN3R5-30LL Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V 3.6 mΩ logic level MOSFET

NXP Semiconductors
120
I_D
(A)
100
80
60
40
20
0
0
003aae139
(1)
50
100
150
200
T_mb (°C)
PSMN3R5-30LL ₁₂₀
P_der
(%)
80
N-channel
30DVRA3F.T6DmRADΩ^{FRTAloDFTRgADicFRTDAlDeRF}₀₃TRAv_aAFaDe1^TFRl_{6TADMDFRTORDAARFDSTFARFTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF}
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 3
junction to mounting
base
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Min Typ Max Unit
-
0.9 1.77 K/W
-
[tbd] -
K/W
1
Z_th (j-mb)
(K/W)
δ = 0.5
003aae141
10^−1
0.2
0.1
0.05
P
δ = ^tp
T
0.02
single shot
10^−2
10^−6
10^−5
10^−4
10^−3
10^−2
t_p
t
T
10^−1
t_p (s)
1
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN3R5-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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