PSMN3R5-30LL Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 30 V 3.6 mΩ logic level MOSFET

PSMN3R5-30LL NXP Semiconductors
Table 6.
Symbol
t_d(on)
t_r
t_d(off)
t_f
Characteristics …continued
Parameter
Conditions
turn-on delay time
rise time
V_DS = 15 V; R_L
R_G(ext) = 4.7 Ω;
turn-off delay time
fall time
= 1 Ω; V_GS
T_j = 25 °C
=
4.5
V;
N-channel
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Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C; see
Figure 16
-
0.85 1.2 V
t_rr
reverse recovery time I_S = 15 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V
-
34
-
ns
-
34
-
nC
100
g_fs
(S)
80
003aae144
60
40
20
0
0
10
20
30
40
50
I_D (A)
50
I_D
(A)
40
30
20
10
0
0
003aae143
T_j = 175 °C
T_j = 25 °C
1
2
3
4
V_GS(V)
Fig 4. Forward transconductance as a function of
drain current; typical values
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN3R5-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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