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| PSMN3R5-30LL Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 30 V 3.6 mΩ logic level MOSFET | |||
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NXP Semiconductors
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
PSMN3R5-30LL Conditions
ID = 0.25 mA;
VGS
=
0
V;
Tj
=
-55
N-channel
°C
30DV2MR7Ai3nF.T6DmRADâ¦-TFRyTAploDFTRgADicFRTDA-MlDeRFaTRAvxAFDeTFRlTADMDFRTOVURDAARFDnSTFARiFtTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
30
-
-
V
ID = 1 mA; VDS = VGS; Tj = 150 °C; see
Figure 9
0.65 -
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 9 and 10
1.3 1.7 2.15 V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 9
-
-
2.45 V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C; see
Figure 11
-
0.04 2
µA
-
-
50
µA
-
10
100 nA
-
10
100 nA
-
-
5
mâ¦
VGS = 10 V; ID = 15 A; Tj = 150 °C; see
Figure 11
-
5.2 6.4 mâ¦
VGS = 10 V; ID = 15 A; Tj = 25 °C; see
Figure 12
-
3
3.6 mâ¦
RG
internal gate resistance f = 1 MHz
(AC)
-
2.4 -
â¦
Dynamic characteristics
QG(tot)
total gate charge
ID = 15 A; VDS = 15 V; VGS = 10 V; see
Figure 13 and 14
-
37
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 15 A; VDS = 15 V; VGS = 10 V; see
Figure 13 and 14
-
33
-
nC
-
5.9 -
nC
QGS(th)
pre-threshold
gate-source charge
ID = 15 A; VDS = 15 V; VGS = 10 V; see
Figure 13
-
3.4 -
nC
QGS(th-pl) post-threshold
gate-source charge
-
2.5 -
nC
QGD
gate-drain charge
ID = 15 A; VDS = 15 V; VGS = 10 V; see
Figure 13 and 14
-
5.2 -
nC
VGS(pl)
gate-source plateau
voltage
VDS = 15 V; see Figure 13 and 14
-
2.7 -
V
Ciss
input capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 15
Crss
reverse transfer
capacitance
-
2061 -
pF
-
409 -
pF
-
177 -
pF
PSMN3R5-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 18 February 2010
© NXP B.V. 2010. All rights reserved.
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