PSMN1R6-30PL127 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET

NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 12. Gate-source threshold voltage as a function of
junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 14. Gate charge waveform definitions
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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