PSMN1R6-30PL127 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET

PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switiching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
30 V
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; [1] -
-
100 A
see Figure 1;
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
306 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 4.5 V; I_D = 25 A;
V_DS = 15 V; see Figure 14;
see Figure 15
-
27 -
nC
Q_G(tot) total gate charge
Static characteristics
V_GS = 4.5 V; I_D = 25 A;
V_DS = 15 V; see Figure 14
-
101 -
nC
R_DSon
drain-source
V_GS = 10 V; I_D = 25 A;
on-state resistance T_j = 25 °C;
[2] -
1.4 1.7 mΩ
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.