PSMN1R6-30PL127 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET

NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
100
I_D
(A)
80
60
40
20
0
0
003aad013
T_j = 175 °C
25 °C
1
2
3 _{VGS (V)} 4
003aad018
400
g_fs
(S)
300
200
100
0
0
20
40
60
80
100
I_D (A)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
10
R_DSon
(mΩ)
8
6
4
003aad019
10⁵
C
(pF)
10⁴
003aad017
C_iss
C_rss
2
0
0
5
10
15 _{VGS (V)} 20
10³
10^-1
1
10 _{VGS (V)} 10²
Fig 9. Drain-source on-state resistance as a function Fig 10. Input and reverse transfer capacitances as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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