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| PSMN1R6-30PL127 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET | |||
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NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 m⦠logic level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1;
VGS = 10 V; Tmb = 25 °C; see Figure 1;
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
-
30
V
-
30
V
-20 20
V
[1] -
100 A
[1] -
100 A
-
1268 A
-
306 W
-55 175 °C
-55 175 °C
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C;
tp ⤠10 µs; pulsed; Tmb = 25 °C
[1] -
-
100 A
1268 A
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ⤠30 V;
drain-source avalanche RGS = 50 â¦; unclamped
energy
-
1.7 J
[1] Continuous current is limited by package.
400
ID
(A)
300
200
100
(1)
003aad003
120
Pder
(%)
80
40
03aa16
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R6-30PL_2
Product data sheet
Rev. 02 â 25 June 2009
© NXP B.V. 2009. All rights reserved.
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