PSMN1R6-30PL127 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET

NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_DS = 12 V; R_L = 0.5 Ω; V_GS = 4.5 V;
R_G(ext) = 4.7 Ω
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; see
Figure 17
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V
[1] Measured 3 mm from package.
300
I_D
10
(A)
4.5
250
3.5
003aad011
3
200
2.8
150
100
2.6
50
V_GS (V) = 2.4
0
0
2
4
6
8
10
V_DS (V)
10
R_DSon ^2.6
(mΩ)
8
6
4
2
0
0
Min Typ Max Unit
-
104 -
ns
-
163 -
ns
-
174 -
ns
-
87
-
ns
-
0.77 1.2 V
-
64
-
ns
-
79
-
nC
003aad012
2.8
V_GS (V) = 3
4.5 _3.5
10
100
200 I_D (A) 300
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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